Abstract
Various structures of Si-based resonant interband tunneling diodes (RITD) grown by low temperature molecular beam epitaxy (MBE) were studied. The results show that the peak-to-valley current ratio (PVCR) is degraded when placing SiGe layers directly adjacent to the P δ -plane. A very thin Si layer offsetting the P δ -plane and any surrounding SiGe layers is necessary. Vertically integrated npnp Si-based RITD pairs are realized by stacking two RITDs with a connecting backwards diode between them. The I– V characteristics of the vertically integrated RITDs pairs demonstrate two sequential negative differential resistance (NDR) regions under forward biasing. Tri-state logic is demonstrated by using the vertically integrated RITDs as the drive and an off-chip resistor as the load.
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