Abstract
Photodiodes designed to be sensitive in the region 1.4–1.7 µm and obtained by vacuum magnetron sputtering of the Pt layer on the surface of the HgInTe single crystal are studied. Temperature dependence on electrical characteristics of the Schottky diodes was investigated in a temperature range from 120 K to 260 K. The current–voltage characteristics of the diodes show excellent rectification behavior. Temperature dependence on the ideality factor and apparent barrier height was determined, including the effect of series resistance. The ideality factor evaluated was observed to decrease from 2.93 to 1.42, while the flatband barrier height was 0.46 eV in this temperature range. The temperature dependence of the forward characteristics can be well explained by thermionic emission theory. The flatband Schottky barrier height for Pt on Hg3In2Te6 is smaller than the value reported for both ITO and Au rectifying contacts on this material. A possible mechanism of the correlation of the ideality factor and barrier height has been proposed.
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