Abstract
The temperature effects on the capacitance–voltage characteristics as well as the room temperature capacitance–frequency characteristics of TlGaTe2 crystals are investigated. A very wide range of linearly varying tunable capacitance from 6.0μF to 60pF was recorded. The capacitance–voltage characteristics, being recorded in the temperature range of 290–380K, revealed a linear increase in the build in voltage associated with exponential decrease in the density of non-compensated ionized carriers with increasing temperature. The high temperature (up to 380K) biasing ability, the linear tunability and the high dielectric constant values (∼103) make the TlGaTe2 crystals applicable in microelectronic components.
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