Abstract
The Capacitance-Voltage (CV) characteristics of n-channel Double Gate (DG) MOS structures are investigated. An accurate and efficient fully coupled 1-D Schrodinger-Poisson self-consistent solver has been used. The numerical solver employs finite element method to calculate different electrostatics of n-channel DGMOS structures. The CV characteristics are modeled by taking the effect of interface trapped charges into account for varying densities of interface states. Both high frequency (HF) and low frequency (LF) operations are considered.
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