Abstract
Bandgap energy and conduction band offset of pseudomorphic GaAsSb on GaAs are studied by temperature dependent photoluminescence and theoretical model fitting. GaAs0.643Sb0.357/GaAs quantum well is determined to have a weak type‐I (almost flat) conduction band alignment over the entire temperature range, with a conduction band offset of 4.5 ± 11.9 meV at 0 K and 11.5 ± 12.6 meV at room temperature.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
