Temperature-dependency performance of InGaAsP semiconductor laser amplifiers

Abstract

We report a theoretical analysis on the influence of operation temperature on the static and dynamic properties of an InP/InGaAsP semiconductor Laser amplifier (SLA). We use a numerical wideband steady-state model and numerical algorithm, to study the (I-P) curves, gain bandwidth, noise figure, outpout noise power and outpout OSNR in a range between - 20 °C and 100 °C. InP/InGaAsP SLA exhibited a thershold curent as low as 55mA at 100 °C and the characteristic temperature (T0) of the SLA was found to be 142.8 0C, which confirms the high temperature operation of the device. Moreover, the results show that InP/InGaAsP SLA can cover 3dB operating at signal wavelengths between 1.54µm and 1.58µm with gains of up to 25dB at -20 0C. This peak slightly decreases with temperature. Furthermore, a high out power saturation of 7 dB was exhabited at -20 °C and a low noise figure of around 2.8 dB was achieved in the deviece. Finally, our model shows the elegant performance of InGaAsP/InP SLA in the range between -20 °C and 100 °C, which makes it a promising candidate for integrated photonics.