Temperature dependency of double material gate oxide (DMGO) symmetric dual-k spacer (SDS) wavy FinFET

Abstract

Symmetric Dual-k Spacer (SDS) Trigate Wavy FinFET is a novel hybrid device that combines three significant and advanced technologies i.e., ultra-thin-body (UTB), FinFET, and symmetric spacer engineering on a single silicon on insulator (SOI) platform. This innovative architecture promises to enhance the device performance as compared to conventional FinFET without increasing the chip area. For the first time, we have incorporated two different dielectric materials (SiO2, and HfO2) as gate oxide to analyze the effect on various performance metrics of SDS wavy FinFET. This work evaluates the response of double material gate oxide (DMGO) on parameters like mobility, on current (Ion), transconductance (gm), transconductance generation factor (TGF), total gate capacitance (Cgg), and cutoff frequency (fT) in SDS wavy FinFET. This work also reveals the presence of biasing point i.e., zero temperature coefficient (ZTC) bias point. The ZTC bias point is that point where the device parameters become independent of temperature. The impact of operating temperature (T) on above said various performances are also subjected to extensive analysis. This further validates the reliability of DMGO-SDS FinFET and its application opportunities involved in modeling analog/RF circuits for a broad range of temperature applications. From extensive 3-D device simulation, we have determined that the inclusion of DMGO in SDS wavy FinFET is superior in performance.