Temperature dependences of electrical properties of n-type PbSe single-crystalline films subjected to α-particle bombardment

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The effect of a low-energy α-particle bombardment (5.5 MeV) on the electrical properties of n-PbSe is studied. It is found that the bombardment increases the carrier density. The samples with an initial electron concentration lower than 1017 cm−3 change their properties after an α-particle dose of up to approximately 1012 cm−2. The change is not steady for the samples with higher initial carrier densities. The mobilities of charge carriers decrease in samples with a lower initial carrier density and do not change in those with a high carrier density.