Abstract
This article investigated the temperature dependence of the width band gap in InxGa1-xAs quantum well in the presence of a transverse strong magnetic field. A new method was proposed for determining the width band gap of GaAs/InxGa1-xAs heterostructures based on a InxGa1-xAs quantum well in the presence of a magnetic field and temperature. An analytical expression is obtained for calculating the width band gap of a rectangular quantum well at various magnetic fields and temperatures.
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