Abstract
The thermoelectric properties of Sb-doped n-type and Ag-doped p-type Mg 2 Si 0.6 Ge 0.4 samples were investigated in the temperature range 300 to 900 K. The scattering factor r was determined to be 0.0 by measuring the temperature dependence of the Hall mobility. Thermoelectric power and electrical conductivity were measured and discussed on the basis of the degenerated carriers. The thermal conductivity was evaluated from the values measured at 300 K.
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