Abstract
AbstractWe investigated the thermoelectric properties of non‐doped Mg2Si0.9‐xSnx Ge0.1 (x = 0, 0.60, 0.65, 0.75, and 0.90) solid solutions of quaternary systems prepared using a liquid–solid reaction and hot‐pressing methods. All the sintered compact samples consisted of a single phase with an anti‐fluorite structure, which was revealed by X‐ray diffraction (XRD). The lattice constant increased linearly with increasing amounts of Sn in the sample. Mg2Si0.90Ge0.10 and Mg2Si0.30Sn0.60Ge0.10 exhibited n‐type conduction and possessed a negative Seebeck coefficient. On the other hand, Mg2Si0.25Sn0.65Ge0.10, Mg2Si0.15Sn0.75Ge0.10, and Mg2Sn0.90Ge0.10 exhibited positive conduction. The resistivities ranged from 3.22 × 10‐5 Ω m for Mg2Si0.90Ge0.10 to 1.37 × 10‐2 Ω m for Mg2Si0.30Sn0.60Ge0.10 at 300 K. The thermal conductivity varied depending on the amount of Sn in the samples. The minimum value of the thermal conductivity was 1.93 W m‐1 K‐1 for Mg2Si0.30Sn0.60Ge0.10 and Mg2Si0.25Sn0.65Ge0.10 at 450 K. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
