Abstract
The temperature dependence of the work function of a (111) silicon surface has been measured at temperatures from 1335 to 1638 °K. The work function over this temperature can be expressed as φ (T) =4.18+3.3×10−4T eV. A Richardson A value of 2.05 A/cm2 °K2 and a mean electron reflection coefficient of ?=0.213 were also determined.
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