Abstract
A model of the temperature behavior of the photoquenching of EL2 in semi-insulating GaAs is presented. The thermal emission of a hole trapped on an actuator level accounts for the very low photoquenching efficiency above 85 K. This effect is presented in terms of a set of rate equations that reproduce in a reliable way the temperature dependence of the photoquenching of EL2. The activation energy of the actuator level suggests a hole trap level other than GaAs as was previously assumed.
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