Abstract
Thermally stimulated current spectroscopy, photoquenching, and photorecovery have been used to reveal the EL2-related metastable defect levels in semi-insulating GaAs. It has been found that one set of metastable levels is directly related to EL2 and the other set is indirectly related to EL2 defect through charge transfer. The origin of these EL2-related metastable levels has been discussed in the context of recently proposed three-center-complex model of EL2 in semi-insulating GaAs.
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