Abstract
We report the time-dependent intensities for the photoluminescence (PL) at various temperatures (10K⩽T⩽300K) in amorphous GeS2, which is known to exhibit not only PL fatigue but also PL recovery behavior. A difference in reversibility in fatigue-recovery process was found between room temperature (RT) and those at 110K or below. Another small band of PL was also observed at 10K or less, which also showed a time-dependence in intensity. A functional form to describe the time dependence was adopted based on a simplified model which have been obtained in a previous study and extended to describe the fatigue-recovery behaviors for all temperature range which have measured below RT.
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