Abstract

In this work, we have studied the effects of intense illumination on the photoluminescence (PL) spectrum of hydrogenated amorphous carbon films prepared by glow discharge decomposition of CH4 at a rf power density of 0.8 W/cm2. The changes in the PL spectra of the as-prepared samples were measured as a function of both the sample temperature in the range 13–300 K and the illumination time. Similar to hydrogenated amorphous silicon, light soaking of carbon samples reduces their integrated PL intensity and changes the PL band shape; both of these effects depend on the energy of the excitation as well as on the sample temperature. The degraded a-C:H films can be restored to their original nondegraded state by annealing, but in contrast to amorphous silicon, the annealing temperature that recovers the original state in a-C:H films is below room temperature. Previous studies in similar samples suggest that the PL fatigue may occur as a result of an increase in the nonradiative recombination centers associated with dangling bonds which are created by illumination.

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