Abstract
Temperature dependence of the optical properties of InGaN/GaN single quantum well light-emitting diodes (LEDs) with different indium (In) contents is investigated by using the effective mass theory taking into account the band-gap shrinkage and lattice thermal expansion. The peak intensity of the spontaneous emission spectrum is decreased by 30.6%, 30.4%, and 30.3% for the violet, blue, and green LEDs in the temperature range 300 K–400 K, while the reductions of internal quantum efficiency (η) with temperature are ~0.13, ~0.11, and ~0.1 respectively at the injection current density of 100 A cm−2. Moreover, two different slopes for all the η–T curves are observed: a lower absolute value of the slopes at T = 300–350 K; a larger absolute value of the slopes at T = 350–400 K. The numerical results also indicate that the efficiency droop effect with increasing the temperature becomes more serious, especially for the InGaN/GaN LED structures with the lower In-content.
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