Temperature dependence of the low frequency noise in indium arsenide nanowire transistors

Abstract

We studied the low frequency noise in indium arsenide (InAs) nanowire field effect transistors at different temperatures and gate voltages. Mostly, the excess noise had 1/f dependence except at low temperatures and gate voltages close to the threshold value where the noise changed gradually to Lorentzian. The Hooge’s parameter showed thermally activated behavior with minimum value ∼5×10−4. The distribution of activation energies of the fluctuators responsible for the noise was found to have broad minima associated with the characteristic temperature of the thermally activated Hooge’s parameter.