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https://doi.org/10.1016/0038-1098(84)90825-1
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Cite Journal: Solid State Communications |  Publication Date: Oct 1, 1984 |
 Citations: 2 |
Affiliation: Aristotle University of Thessaloniki
The minority carrier lifetime has been measured at single dislocations in n-type GaP. From the temperature dependence of the dislocation lifetime we found a dominant recombination centre at a level 0.15eV which is, probably, associated with S-donor/Cu complexes.
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