Abstract
The temperature dependence of the fundamental absorption edge in CuGaSe 2 single crystals was determined in the temperature range from 15 to 300 K. Above about 120 K the gap energy changes linearly with temperature with d E g /d T = − (2.1 ± 0.1) eV K −1. The downshift in d E g /d T of the I–III–VI 2 compounds compared to their II–VI analogs is discussed accounting for the p- d hybridization of the uppermost valence band.
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