Temperature dependence of solid-vapor compositional relation in epitaxial growth of GaAs xSb 1- x by low-pressure metalorganic chemical vapor deposition

Abstract

GaAs x Sb 1- x was grown by low-pressure metalorganic chemical vapor deposition (MOCVD) using triethylgallium (TEGa), trimethylantimony (TMSb) and tertiarybutylarsine (tBAs) as precursors. The entire range of compositions could be grown at the low temperature of about 420°C. The relation of solid composition, x, to vapor phase composition, [tBAs/(TMSb + tBAs)], is very different from previous authors' results obtained by normal pressure MOCVD using TMGa, TMSb and AsH 3 as precursors. Our result, however, approaches their results when the growth temperature is increased beyond 500°C toward 550°C.