Abstract

The temperature dependence of sensitized Er3+ emission via localized states and silicon nanoclusters has been studied to get an insight into the excitation and de-excitation processes in silicon-rich oxynitride films. The thermal quenching of Er3+ luminescence is elucidated by terms of decay time and effective excitation cross section. The temperature quenching of Er3+ decay time demonstrates the presence of non-radiative trap states, whose density and energy gap between Er3+4I13/2 excited levels are reduced by high-temperature annealing. The effective excitation cross section initially increases and eventually decreases with temperature, indicating that the energy transfer process is phonon assisted in both samples.

Highlights

  • Incorporating rare earth (RE) ions into semiconductors and glasses has aroused much research interest in the last decades in view of potential optoelectronic applications [1]

  • Transmission electron microscopy measurements showed the absence of Si aggregates in the 600°C annealed sample, while silicon nanoclusters (Si-NCs) could be clearly observed in the 1,100°C annealed sample [19]

  • Both Er-doped silicon-rich oxynitride (SRON) (Er)- and Si-NC-related PL bands are observed simultaneously in the 1,100°C annealed sample, while the Si-NC-related PL band is absent in the 600°C annealed sample

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Summary

Introduction

Incorporating rare earth (RE) ions into semiconductors and glasses has aroused much research interest in the last decades in view of potential optoelectronic applications [1]. Luminescence of Er3+ ions in silicon undergoes a significant thermal quenching due to Auger de-excitation and energy back transfer processes [2,4]. To address such challenge, researchers have tried to embed Er3+ ions in hosts with larger bandgap [5], such as silicon-rich oxide (SRO) or silicon-rich nitride (SRN) [6,7,8,9,10,11,12,13,14,15]. Silicon-rich oxynitride (SRON) materials have been studied as optical platforms for erbium doping [16,17,18,19]. Er-doped SRON (Er:SRON) shows intense 1.54-μm photoluminescence (PL), and non-resonant Er excitation

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