Abstract
We have recently described the principle of operation of a double Hall sensor structure (DHSS) reducing the voltage offset [M. Oszwałdowski and S. El-Ahmar, Rev. Sci. Instrum. 88, 075005 (2017)]. The correctness of operation of the structure and its characteristic features were checked and clarified experimentally using the structures made of InSb thin films. In the present paper, we investigate the very important problem of the temperature dependence of the reduced offset in the DHSS. We show that the reduced voltage temperature dependence is entirely governed by the temperature dependence of the resistance of the component Hall sensors. If the averaged temperature dependence of the resistance of both the component Hall sensors were the same in a given temperature range, the reduced offset of the DHSS can be virtually independent of temperature in that temperature range. This behavior is confirmed by experimental investigations performed on DHSSs made of InSb thin films.
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