Abstract
In this contribution we confirm that heavily donor doped epitaxial layers of InSb are excellent material for the preparation of Hall sensors working in a broad range of temperatures. In particular, we confirm that InSb epitaxial thin films having the donor concentration of (1–2)×10 18 cm −3 have optimal parameters for manufacturing Hall sensors for precise measurements of magnetic field. Such sensors have the magnetic sensitivity K>0.1 V/T, the temperature dependence of the magnetic sensitivity β≤0.01% per degree and the temperature coefficient of the input/output resistance α<0.1% per degree. These parameters are weakly temperature dependent between 77 and 500 K. The characteristics of the presented Hall sensors are compared with those of commercially available Hall sensors and the Hall sensors based on the 2DEG.
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