Abstract
Nowadays, SOI field-effect Hall (SOI FEHS) sensor has a number of advantages due to the expansion of the functionality of such a device. The main disadvantage of SOI FEHS is the relatively low magnetic sensitivity. Therefore, the main task is to consider the possibility of increasing the magnetic sensitivity of such sensors. In the paper we have studied a mathematical model and simulation route for the description of the electrical parameters of SOI field-effect Hall sensor by comparing the transfer characteristics as described in the work and calculated using the device and technology simulation Synopsys TCAD. Thereby a method for increasing the magnetic sensitivity by changing the substrate concentration in the working layer of the sensor has been considered. The developed mathematical model allows us to study the features of SOI Hall sensor field in details as well as to increase magnetics sensitivity.
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