Temperature dependence of photoluminescence from InAsP/InP strained quantum well structures grown by metalorganic chemical vapor deposition

Abstract

In this article, we report the growth and characterization of InAsP/InP strained single quantum well (SSQW), strained single quantum well (SSQW) stack, and strained multiple quantum well (SMQW) structures on (1 0 0)-oriented InP substrates grown by metalorganic chemical vapor deposition. Double-crystal X-ray diffraction, photoluminescence (PL) and transmission electron microscope (TEM) are used to characterize the strained quantum wells. The high-quality crystalline InAs y P 1 −y (72Å)/InP SSQW structure with y⩽0.36 exhibits a 9.9 meV full-width at half-maximum (FWHM) of 10 K PL spectra. The peaks in the PL spectra for SSQW stack structure with a well thickness of 8, 14, and 35 Å vanish above 100, 150, and 296 K, respectively, presumably due to the decrease of photons yielded by electron–hole recombination in thinner quantum well regions on increasing the temperature. The PL peak emission energy dependence of well thickness in the InAsP/InP SSQW stack structure is in good agreement with the calculated results. In addition, the variations of the PL peak energy and FWHM in all the InAsP/InP SSQW, SSQW stack, and SMQW structures are described in detail.