Abstract
Photocurrent was measured as a function of wavelength for Cl-doped semi-insulating CdTe specimens with evaporated Au electrodes. It is found that the photocurrent decreased with decreasing temperature. This behavior of the photocurrent is different from that usually observed in other semiconductor specimens. Employing the theory, which was proposed for the amorphous semiconductor, we attempted to explain this phenomenon. From the photocurrent spectral peak at various temperatures, the band gap of CdTe was deduced and an empirical equation for the temperature dependence of the band gap EG(T) was obtained as EG(T)=EG(0)-αT2/(T+β), α=5.21×10-4 eV/K, β=37.5 K.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
