Abstract
Magnetoresistance and Hall effect measurements were carried out for Ho doped n-InSe (n-InSe:Ho) sample in the temperature range 10–340 K, in which the sample exhibits transverse magnetoresistance (MJ⊥B) and longitudinal magnetoresistance (MJ//B) effect. The fit to a temperature power law T - β gives MJ⊥B ∝ T - 1.07 and MJ//B ∝ T - 1.11 in the range 10–340 K for n-InSe:Ho. The transverse magnetoresistance coefficient of InSe:Ho in the temperature range 10–340 K is much greater than that of the reference n-InSe sample. As the temperature increases, the carrier concentration in the n-InSe:Ho sample increases between 10–340 K. Impurity energy levels calculated from ln(p/T 3/2) vs 103/T plot for n-InSe:Ho in the range 10–40 K, 40–240 K and 260–340 K are Ec-69 meV, Ec-264 meV and Ec-568 meV, respectively. The electron Hall mobility of the n-InSe:Ho sample decreases, as µH ∝ T - 2.35 for 140–340 K. The Hall mobility and the carrier concentration of the n-InSe:Ho sample increase with increasing temperature in the range 10–340 K.
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