Abstract
Magnetoresistance and Hall effect measurements in very lightly Te-doped n-type GaAs samples grown by the Liquid Encapsulated Czochralski (LEC) process in the temperature range 10 to 290 K were carried out. The transverse and longitudinal magnetoresistance coefficients for n-GaAs increase with increasing sample temperatures up to 70 and 80 K and decrease in the range 70 to 290 K and 80 to 290 K, respectively. As the temperature increases, the experimental carrier concentration obtained from the Hall effect measurements in the GaAs sample increases up to 140 K, decreases in the range of 140 to 220 K, and increases for T > 220 K. The change of the theoretical carrier concentration as a function of temperature in accordance with a new model concerning the behaviour of Reverse Contrast (RC) is in agreement with the experimental carrier concentration. The electron Hall mobility increases with increasing temperature and the electrical conductivity exhibits conventional behaviour in the measurement temperature range of 10 to 290 K.
Published Version
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