Abstract
Ion-beam mixing in AlxGa1−xAs and InP matrices was measured as a function of irradiation temperature using 1 MeV Kr ion irradiation. For these III–V compound semiconductors, the mixing increased with temperature up to a critical temperature Tc at which point it precipitously dropped. Tc was identified as the amorphous-to-crystalline transition temperature in these materials under 1 MeV Kr irradiation.
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