Temperature Dependence of High Frequency Noise Behaviors for RF MOSFETs

Abstract

For the first time, the temperature dependences of radio frequency (RF) metal oxide semiconductor field effect transistors' intrinsic noise currents, including the induced gate noise current (i <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">g</sub> ), channel noise current (i <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">d</sub> ) and their correlation noise current, are experimentally investigated. The power spectral densities for the induced gate noise current and correlation noise current are found to rise as temperature increases, and decline for the channel noise current. Moreover, by using van der Ziel's noise model, our experimental results show that, besides ambient temperature, the channel conductance is the main factor dominating the RF noise behaviors. Finally, bias dependence results are also presented.