Abstract
Free-exciton photoluminescence (PL) properties of cubic CdS films on GaAs substrates have been studied by means of picosecond time-resolved PL spectrum measurements. A PL band appears at the light-hole exciton energy in strained CdS films. The linewidth of the free-exciton PL is determined by the inhomogeneous strains and the exciton–phonon interactions. At high temperatures above 80 K, the linewidth of the exciton luminescence drastically increases and the exciton-optical-phonon interaction is the dominant scattering process. The temperature dependence of free-exciton luminescence has been determined for cubic CdS films.
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