Abstract
We have studied the temperature dependence of exciton localization dynamics in InxGa1−xN epitaxial films (x=0.09) by means of optical Kerr-gate time-resolved photoluminescence (PL) spectral measurements. During 30ps after 150fs laser excitation, the PL dynamics is sensitive to the measurement temperature. In the temperature range of 6–50K, the PL rise time decreases and the PL peak energy shifts to higher energy with an increase of temperature. At high temperatures above 80K, the thermal quenching of the PL at shallow localized states occurs. The energy relaxation processes of excitons in localized states of InxGa1−xN films are discussed.
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