Abstract

We have studied photoluminescence (PL) dynamics of CdS nanocrystals fabricated by sequential Cd+ and S+ ion implantation into Al2O3 matrices. The PL spectrum and PL decay dynamics of CdS nanocrystals are sensitive to the measurement temperature. This is because excitons trapped at shallow localized states are thermally excited to the high-energy state at high temperatures. Two PL bands appear near the absorption edge at elevated temperatures near 100 K. From time-resolved PL spectra and the PL decay dynamics, it is concluded that the observed PL bands near the absorption edge are due to free excitons and excitons trapped at shallow localized states. The PL mechanism in CdS nanocrystals is discussed.

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