Abstract
Temperature dependence of electrical properties of split-N2O grown oxides on strained SiGe layers by rapid thermal oxidation is reported. The reliability and thermal stability of ultrathin oxides have been examined by high frequency capacitance–voltage and current density versus electric field measurements. It is observed that at a low (<6 MV/cm) electric field, the shallow trap-assisted conduction mechanism is responsible for the leakage current below 100 °C and the Frenkel–Poole conduction dominates above 100 °C. At a high (>11 MV/cm) electric field, however, the leakage current is mainly governed by the Fowler–Nordheim tunneling. Charge-to-breakdown measurements at a constant current stressing show a higher reliability for the split-N2O grown oxides.
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