Temperature Dependence of Digital Single-Event Transients in Bulk and Fully-Depleted SOI Technologies

Bharat L. Bhuva,Cody A. Dinkins,Lloyd W. Massengill,Robert A. Reed,Jonathan R. Ahlbin,Michael L. Alles,Robert L. Shuler,Pascale Gouker,Balaji Narasimham,Marcus H. Mendenhall,Vishwanath Ramachandran,Michael W. McCurdy,Dale McMorrow,Ronald D. Schrimpf,Matthew J. Gadlage

doi:10.1109/tns.2009.2034150

Temperature Dependence of Digital Single-Event Transients in Bulk and Fully-Depleted SOI Technologies

Bharat L. Bhuva, Cody A. Dinkins + Show 13 more

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https://doi.org/10.1109/tns.2009.2034150

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Journal: IEEE Transactions on Nuclear Science	Publication Date: Dec 1, 2009
Citations: 49	License type: cc-by-nc

Affiliation: Vanderbilt University, Johnson Space Center, MIT Lincoln Laboratory, Massachusetts Institute of Technology, Broadcom (United States), United States Naval Research Laboratory

#Fully-Depleted Silicon On Insulator Technologies #Fully-Depleted Silicon On Insulator + Show 8 more

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Abstract

Factors that affect single-event transient pulse widths, such as drift, diffusion, and parasitic bipolar transistor parameters, are also strong functions of operating temperature. In this paper, SET pulse-width measurements are performed over a wide temperature range in both bulk and fully-depleted SOI (silicon on insulator) technologies. The average pulse-width increases with temperature for the bulk process, but not for the FDSOI process.

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