Abstract
For the first time, a theoretical model for polycrystalline diamond (PCD) field effect transistors is proposed. The model is accompanied by an investigation of the single crystalline diamond (SCD) FET for the verification of material parameters employed in the simulation. The model runs on a device simulator, PISCES-IIB, and correctly accounts for the temperature-dependent shift of the I–V characteristics from pentode-like to triode-like behaviour as well as the temperature dependent pinch-off and saturation. Agreement between simulated and measured currents is obtained with a higher value of the activation energy for the dopant in PCD than in SCD, as has been reported for silicon.
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