Abstract
The influence of the specimen temperature during MeV Kr irradiation on the extent of compositional disordering in GaAs-AlAs superlattices has been determined. For low-temperature irradiations (133\char21{}233 K), complete intermixing of the superlattice is observed. However, the mixing efficiency decreases with increasing specimen temperature between room temperature and 523 K. These results suggest the existence of a miscibility gap in the coherent-phase diagram of GaAs-AlAs superlattices with a critical temperature greater than 523 K.
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