Temperature Dependence of Atomic Ordering and Composition Modulation in Inassbbi Grown by Molecular Beam Epitaxy on GASB Substrates

Abstract

The structural and optical properties of two 210 nm thick InAsSbBi epilayers grown on (100) GaSb substrates by molecular beam epitaxy at 400 °C and 280 °C are investigated using X-ray diffraction, Rutherford backscattering spectroscopy, transmission electron microscopy, and photoluminescence spectroscopy. Both samples are free of observable defects. Improved crystal and optical quality are realized at 400 °C. The Bi incorporation coefficient increased at 280 °C. Lateral composition modulation in the Bi mole fraction is only observed in growth at 400 °C and CuPtB -type atomic ordering on the {111}B planes is only observed in growth at 280 °C.