Abstract
The structural and optical properties of lateral composition modulation (LCM) in (InP)n/(GaP)n short-period superlattice grown by molecular beam epitaxy were studied with transmission electron microscopy (TEM) and photoluminescence (PL) at the growth temperature (T/sub g/) of 425 and 490/spl deg/C for n = 1, 1.7, and 2. LCM occurs only in a [1-10] direction at T/sub g/ = 490/spl deg/C for n = 1 and 2. On the contrary, LCM occurs both in [1-10] and [110] directions, parallel to [100] direction, at T/sub g/ /spl ges/ 425/spl deg/C for n = 1.7. This is due to the stronger induction of LCM in tensile strain (/spl sim/-10% for n = 1.7) than in compressive strain (/spl sim/6% for n = 1 and 2). The 9 K-PL measurements show that the LCM experiences the reduction of bandgap up to /spl sim/345 meV as both n and T/sub g/ increase. This is the best data ever reported so far. The origin of bandgap shrinkage is mainly attributed to LCM along with the contribution of CuPt-type ordering.
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