Abstract
The lateral composition modulation of strain compensated (GaInP) m (GaInAs) m short-period superlattices (SPSL) has been investigated. Transmission electron microscopy results show that long-range lateral composition modulation is formed in m=2 SPSL grown at 400°C by atomic layer molecular beam epitaxy. The evolution of photoluminescence (PL) peak with temperature shows a blue shift with increasing temperature; in addition, low-temperature PL is strongly polarized. These properties are attributed to the lateral composition modulation. Quantum wires (QWRs) were formed using (GaInP) m (GaInAs) m SPSL as quantum wells in a multiquantum well heterostructure. The formation of QWR is confirmed by their PL properties.
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