Abstract
Four (4) unique optical transitions are reported in both the emission and reflection spectra of high-quality AlGaN/GaN heterostructures. Study of the shifts of spectral peak energies and their intensity variations with temperature, reveal that these transitions arise from Free Exciton recombination and transitions between the A- and B-valence bands and the excited states of the 2-dimensional electron gas (2DEG) at the heterointerface. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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