Temperature dependence for the onset of plastic yield in undoped and indium-doped GaAs

Abstract

The onset of plastic yield in undoped and highly indium-doped GaAs, prepared by liquid encapsulated Czochralski (LEC) growth, has been determined by uniaxial compression tests over the temperature range 250–600 °C. No distinguishable difference in yield stress is observed between undoped and indium-doped GaAs; however, LEC GaAs exhibits a modest increase in yield strength over undoped Bridgman-grown material. The absence of a significant increase in the yield strength of indium-doped over undoped LEC GaAs implies that the mechanism by which indium reduces the dislocation density in GaAs is significantly effective only at temperatures near the melting point.