Abstract
The growth of 2 and 3 inch diameter, oriented semi-insulating GaAs crystals of improved purity by liquid encapsulated Czochralski (LEC) growth from silicon-free, pyrolytic boron nitride (PBN) crucibles in a high pressure Melbourn crystal puller, is described. Undoped and Cr-doped LEC GaAs crystals pulled from PBN crucibles exhibit bulk resistivities in the 107–108 and 108–109 ohm-cm ranges, respectively. High sensitivity SIMS demonstrates that GaAs crystals grown from PBN crucibles contain residual silicon concentrations in the low 1015 cm-3 range, compared to concentrations up to the 1016 cm-3 range for growths in silica containers. The residual chromium content in LEC/PBN-grown crystals is below the l05 cm-3 range.
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