Abstract
Undoped semi-insulating GaAs crystals were grown in a low pressure LEC system using quartz and pyrolytic boron nitride (PBN) crucibles. Crystals grown in PBN crucibles are consistently semi-insulating from the seed end to the tail end. Crystals grown in quartz crucibles have lower Hall mobility. Other properties such as dislocation etch-pit of conductive material beginning from the seed end of the crystal, and have lower Hall mobility. Other properties such as dislocation etch-put density, implant profile, and thermal conversion characteristics of the two types of crystal are about the same.
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