Abstract
We present a detailed and accurate physics based transient simulation for modeling flash memory erasing at ambient and non-ambient temperatures. Typical cells are erased by moving electrons from the floating gate to the drain, source or substrate. Part 1 of this paper derives the equations used to model substrate erasing. This paper addresses drain erase modeling using a simulation based on the solution to Poisson’s equation with temperature as an independent variable. The goal of this paper is to demonstrate the derivation of an accurate erase simulation and show the effects of temperature on the threshold voltage during the erase process. Several papers have been published on this topic but fail to present detailed derivations and none using this exact set of equations to model the temperature dependent erasing process.
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