Temperature Dependant Bandgap Tuning of GaAs, AlAs, InAs, and InP Binaries Grown on different Substrates

Abstract

This article carries out the temperature-dependent study of the band structures of bulk binaries such as AlAs, GaAs, InAs, and InP grown on different substrates thus showing the combined effect of substrate and temperature on the bandgaps of the binary systems under study. For the calculations of the band structures of the binary systems grown on different substrates, the k.p technique has been used. The results have been analyzed successfully. For all the binaries, it has been found that the bandgap is reduced with increasing temperature but the rate of reduction with temperature is different for dissimilar substrates. The outcomes of the calculations for the band structures of binaries grown on lattice-matched and unmatched substrates are very useful for understanding of device performance.