Temperature controlled c axis elongated low symmetry phase BiFeO3 thin film on STO substrate

Peng Ren,Xi Zou,Lu You,Peng Liu,Junling Wang,Soon Khuen Cho,Lan Wang,Baomin Wang

doi:10.1063/1.4789399

Abstract

BiFeO3 thin films with a mixture of tunable R-like and c axis elongated low symmetry phase (T-like phase) are fabricated on STO (001) substrate through controlling of the substrate temperature. Almost pure T-like phase can be grown on STO substrate at 600°C. Comparing with the situations on LAO (001), it is found that, strains from the LAO substrate may be the only reason that induces the T-like phase at higher temperatures. At lower temperatures, the island growth induced strains alone can also generate T-like phase on STO substrate.

Highlights

Temperature controlled c axis elongated low symmetry phase BiFeO3 thin film on STO substrate
The c axis elongated BFO thin films have been discovered as the first large c/a ratio perovskite that shows intrinsic ferroelectric property.[1]
This phase is named as tetragonal phase (T phase).[2]

Summary

Introduction

Temperature controlled c axis elongated low symmetry phase BiFeO3 thin film on STO substrate Epitaxial BiFeO3 thin films and form mixed phase BFO on STO (001) substrate.[14,16] These works indicate another mechanism to provide the strains which is necessary for the growth of T-like phase.

Results

Conclusion