Abstract
This paper addresses the concept of load balancing in the operation of parallel insulated-gate bipolar transistors (IGBTs), in which the temperature is used as the main control parameter. In parallel IGBT operation, it is essential to ensure an equal load distribution across all IGBTs. Two basic algorithm concepts for temperature control were developed for the purpose of balancing. A test model based on the parallel IGBTs operation was assembled in a laboratory and the developed algorithms were tested for the chosen parameters. MATLAB was used for final data processing. The comparison between the two implemented basic algorithms provides insights into the temperature behavior of parallel IGBTs in terms of individual IGBT’s heating and cooling trajectories and time constants. All tests were conducted without the heatsinks to obtain the worst-case scenario in terms of thermal conditions. The test results show that temperature control in the operation of parallel IGBTs is possible but limited.
Highlights
Power electronic converters are used in many segments of modern industry, such as automotive, biomedical, and renewable energy systems, with a steady growth trend likely in future [1,2]
Every controllable power electronic converter has a certain type of a semiconductor implemented, which in low- to high-power applications, is usually an insulatedgate bipolar transistor (IGBT)
Two approaches can be used for this purpose: paralleling power electronics converters, for example, as presented by Wang et al [6]; or using one converter with paralleled IGBT operation [7]
Summary
Power electronic converters are used in many segments of modern industry, such as automotive, biomedical, and renewable energy systems, with a steady growth trend likely in future [1,2]. The advantages of active gate control methods are precise load balancing, ability to balance a large number of paralleled IGBTs (depending on the selected embedded system), and volume and weight does not increase significantly with a higher number of IGBTs. The disadvantages are complicated control and decreased reliability compared to the derating and impedance balancing methods. The control and power sections of the test board had a common ground (pin headers marked with 9; Figure 2). The four digital outputs of the control unit for IGBTs control were connected to the input of gate drivers (pin headers marked with 10; Figure 2). These two algorithms are chosen to show two different but similar simple methods of paralleled IGBT temperature control (one without and one with redundant IGBTs) and to validate both methods.
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