Temperature compensated silicon strain transducer

Abstract

A high output semiconductor strain sensing device for use in transducer applications is described. It consists of a Wheatstone bridge network diffused into a small silicon chip and has a maximum strain sensitivity of I00mV/V/1 000 μ e. With the addition of a simple three resistor network, the device can be compensated such that the temperature dependence of the zero strain offset voltage can be reduced to less than 0.1 μ e per C and the temperature coefficient of sensitivity to less than 001% per C. The properties of pressure transducers made with silicon diaphragms into which similar Wheatstone bridges have been diffused, are also outlined.